VS-HFA16PB120PBF, vs-hfa16pb120-n3 www.vishay.com vishay semiconductors revision: 19-apr-12 1 document number: 94057 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 hexfred ? ultrafast soft recovery diode, 16 a features ? ultrafast and ultrasoft recovery ? very low i rrm and q rr ? designed and qualified according to jedec-jesd47 ? material categorization: for definitions of compliance please see www.vishay.com/doc?99912 benefits ? reduced rfi and emi ? reduced power loss in diode and switching transistor ? higher frequency operation ? reduced snubbing ? reduced parts count description vs-hfa16pb120... is a state of the art ultrafast recovery diode. employing the latest in epitaxial construction and advanced processing techniques it features a superb combination of characteristics which result in performance which is unsurpassed by any re ctifier previously available. with basic ratings of 1200 v and 16 a continuous current, the vs-hfa16pb120... is especially well suited for use as the companion diode for igbts and mosfets. in addition to ultrafast recovery time, the hexfred ? product line features extremely low values of peak recovery current (i rrm ) and does not exhibit an y tendency to snap-off during the t b portion of recovery. the hexfred features combine to offer designers a re ctifier with lower noise and significantly lower switching lo sses in both the diode and the switching transistor. these hexfred advantages can help to significantly reduce s nubbing, component count and heatsink sizes. the hexfred vs-hfa16pb120... is ideally suited for applications in power supplies and power conversion systems (such as inverters), motor drives, and many other similar applicatio ns where high speed, high efficiency is needed. product summary package to-247ac modified (2 pins) i f(av) 16 a v r 1200 v v f at i f 3.0 v t rr typ. 30 ns t j max. 150 c diode variation single die to-247ac modified cathode to b ase 1 3 cathode anode 2 absolute maximum ratings parameter symbol test conditions values units cathode to anode voltage v r 1200 v maximum continuous forward current i f t c = 100 c 16 a single pulse forward current i fsm 190 maximum repetitive forward current i frm 64 maximum power dissipation p d t c = 25 c 151 w t c = 100 c 60 operating junction and st orage temperature range t j , t stg - 55 to + 150 c
VS-HFA16PB120PBF, vs-hfa16pb120-n3 www.vishay.com vishay semiconductors revision: 19-apr-12 2 document number: 94057 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 electrical specifications (t j = 25 c unless otherwise specified) parameter symbol test conditions min. typ. max. units cathode to anode breakdown voltage v br i r = 100 a 1200 - - v maximum forward voltage v fm i f = 16 a see fig. 1 -2.53.0 i f = 32 a -3.23.93 i f = 16 a, t j = 125 c -2.32.7 maximum reverse leakage current i rm v r = v r rated see fig. 2 -0.7520 a t j = 125 c, v r = 0.8 x v r rated - 375 2000 junction capacitance c t v r = 200 v see fig. 3 - 27 40 pf series inductance l s measured lead to lead 5 mm from package body - 8.0 - nh dynamic recovery characteristics (t j = 25 c unless otherwise specified) parameter symbol test conditions min. typ. max. units reverse recovery time see fig. 5, 10 t rr i f = 1.0 a, di f /dt = 200 a/s, v r = 30 v -30- ns t rr1 t j = 25 c i f = 16 a di f /dt = 200 a/s v r = 200 v - 90 135 t rr2 t j = 125 c - 164 245 peak recovery current see fig. 6 i rrm1 t j = 25 c -5.810 a i rrm2 t j = 125 c -8.315 reverse recovery charge see fig. 7 q rr1 t j = 25 c - 260 675 nc q rr2 t j = 125 c - 680 1838 peak rate of fa ll of recovery current during t b see fig. 8 di (rec)m /dt1 t j = 25 c -120- a/s di (rec)m /dt2 t j = 125 c -76- thermal - mechanical specifications parameter symbol test conditions min. typ. max. units lead temperature t lead 0.063" from case (1.6 mm) for 10 s - - 300 c thermal resistance, junction to case r thjc - - 0.83 k/w thermal resistance, junction to ambient r thja typical socket mount - - 80 thermal resistance, case to heatsink r thcs mounting surface, flat, smooth and greased - 0.50 - weight -2.0- g -0.07- oz. mounting torque 6.0 (5.0) - 12 (10) kgf cm (lbf in) marking device case style to-247a c modified (jedec) hfa16pb120
VS-HFA16PB120PBF, vs-hfa16pb120-n3 www.vishay.com vishay semiconductors revision: 19-apr-12 3 document number: 94057 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 1 - maximum forward voltage drop vs. instantaneous forward current fig. 2 - typical values of reverse current vs. reverse voltage fig. 3 - typical junction ca pacitance vs. reverse voltage fig. 4 - maximum thermal impedance z thjc characteristics i f - instantaneous forward current (a) v fm - forward voltage drop (v) 0246 8 0.1 1 100 10 94057_01 t j = 150 c t j = 125 c t j = 25 c i r - reverse current (a) v r - reverse voltage (v) 0 200 400 600 1000 8 00 1200 0.01 0.1 1 10 100 1000 94057_02 t j = 125 c t j = 150 c t j = 25 c c t - junction capacitance (pf) v r - reverse voltage (v) 1 10 100 1000 10 000 1 1000 100 10 94057_03 t j = 25 c 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 100 t 1 - rectangular pulse duration (s) z thjc - thermal response . 94057_04 single p u lse (thermal resistance) d = 0.50 d = 0.20 d = 0.10 d = 0.05 d = 0.02 d = 0.01 p dm t 2 t 1 notes: 1. d u ty factor d = t 1 /t 2 2. peak t j = p dm x z thjc + t c
VS-HFA16PB120PBF, vs-hfa16pb120-n3 www.vishay.com vishay semiconductors revision: 19-apr-12 4 document number: 94057 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 5 - typical reverse recovery time vs. di f /dt (per leg) fig. 6 - typical recovery current vs. di f /dt (per leg) fig. 7 - typical stored charge vs. di f /dt (per leg) fig. 8 - typical di (rec)m /dt vs. di f /dt (per leg) t rr (ns) di f /dt (a/s) 100 1000 20 270 220 70 120 170 94057_05 v r = 200 v t j = 125 c t j = 25 c i f = 16 a i f = 8 a i rr (a) di f /dt (a/s) 100 1000 0 30 10 15 20 25 5 94057_06 v r = 200 v t j = 125 c t j = 25 c i f = 16 a i f = 8 a q rr (nc) di f /dt (a/s) 100 1000 0 1600 1400 400 8 00 1200 200 600 1000 94057_07 v r = 200 v t j = 125 c t j = 25 c i f = 16 a i f = 8 a di (rec)m /dt (a/s) di f /dt (a/s) 100 1000 10 10 000 100 1000 94057_0 8 i f = 16 a i f = 8 a v r = 200 v t j = 125 c t j = 25 c
VS-HFA16PB120PBF, vs-hfa16pb120-n3 www.vishay.com vishay semiconductors revision: 19-apr-12 5 document number: 94057 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 9 - reverse recovery parameter test circuit fig. 10 - reverse recovery waveform and definitions irfp250 d.u.t. l = 70 h v r = 200 v 0.01 g d s di f /dt adju s t q rr 0.5 i rrm di (rec)m /dt 0.75 i rrm i rrm t rr t b t a i f di f /dt 0 (1) (2) (3) (4) (5) (1) di f /dt - rate of change of current through zero cro ss ing (2) i rrm - peak rever s e recovery current (3) t rr - rever s e recovery time mea s ured from zero cro ss ing point of negative going i f to point where a line pa ss ing through 0.75 i rrm and 0.50 i rrm extrapolated to zero current. (4) q rr - area under curve defined by t rr and i rrm t rr x i rrm 2 q rr = (5) di (rec)m /dt - peak rate of change of current during t b portion of t rr
VS-HFA16PB120PBF, vs-hfa16pb120-n3 www.vishay.com vishay semiconductors revision: 19-apr-12 6 document number: 94057 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 ordering information table ordering information (example) preferred p/n quantity per t/r minimum order quantity packaging description VS-HFA16PB120PBF 25 500 anti static plastic tube vs-hfa16pb120-n3 25 500 anti static plastic tube links to related documents dimensions www.vishay.com/doc?95253 part marking information to-247ac modified pbf www.vishay.com/doc?95255 to-247ac modified -n3 www.vishay.com/doc?95442 1 - v ishay semicond u ctors prod u ct 2 - hexfred ? family 3 - electron irradiated 4 -c u rrent rating (16 = 16 a) 5 - pb = to-247ac modified device code 5 1 3 2 4 6 7 hf vs- a 16 pb 120 pbf 6 7 - v oltage rating: (120 = 1200 v ) - environmental digit: pbf = lead (pb)-free and rohs compliant -n3 = halogen-free, rohs compliant and totally lead (pb)-free
outline dimensions www.vishay.com vishay semiconductors revision: 21-jun-11 1 document number: 95253 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 dimensions in millimeters and inches notes (1) dimensioning and tolera nce per asme y14.5m-1994 (2) contour of slot optional (3) dimension d and e do not include mold flas h. mold flash shall not exceed 0.127 mm (0 .005") per side. these dimensions are measu red at the outermost extremes of the plastic body (4) thermal pad contour optional with dimensions d1 and e1 (5) lead finish uncontrolled in l1 (6) ? p to have a maximum draft an gle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154") (7) outline conforms to jede c outline to-247 with ex ception of dimension c symbol millimeters inches notes symbol millimeters inches notes min. max. min. max. min. max. min. max. a 4.65 5.31 0.183 0.209 d2 0.51 1.30 0.020 0.051 a1 2.21 2.59 0.087 0.102 e 15.29 15.87 0.602 0.625 3 a2 1.50 2.49 0.059 0.098 e1 13.72 - 0.540 - b 0.99 1.40 0.039 0.055 e 5.46 bsc 0.215 bsc b1 0.99 1.35 0.039 0.053 ? k 2.54 0.010 b2 1.65 2.39 0.065 0.094 l 14.20 16.10 0.559 0.634 b3 1.65 2.37 0.065 0.094 l1 3.71 4.29 0.146 0.169 b4 2.59 3.43 0.102 0.135 n 7.62 bsc 0.3 b5 2.59 3.38 0.102 0.133 ? p 3.56 3.66 0.14 0.144 c 0.38 0.86 0.015 0.034 ? p1 - 6.98 - 0.275 c1 0.38 0.76 0.015 0.030 q 5.31 5.69 0.209 0.224 d 19.71 20.70 0.776 0.815 3 r 4.52 5.49 1.78 0.216 d1 13.08 - 0.515 - 4 s 5.51 bsc 0.217 bsc e n (2) (3) (4) (4) (2) r/2 b 2 x r s d see view b 2 x e b4 3 x b 2 x b2 l c (5) l1 1 2 3 q d a a2 a a a1 c a (6) p (datum b) p1 d1 (4) 4 e1 view a - a thermal pad d2 dde e c c view b (b1, b3, b5) base metal c1 (b, b2, b4) section c - c, d - d, e - e (c) planting lead assignments diodes 1. - anode/open 2. - cathode 3. - anode 0.10 a c m m ? k b d m m
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